- RS-stocknr.:
- 754-5317
- Fabrikantnummer:
- BSC190N15NS3GATMA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 754-5317
- Fabrikantnummer:
- BSC190N15NS3GATMA1
- Fabrikant:
- Infineon
Datasheets
Wetgeving en compliance
Productomschrijving
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 50 A |
Maximum Drain Source Voltage | 150 V |
Series | OptiMOS 3 |
Package Type | TDSON |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 20 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 125 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Width | 6.1mm |
Length | 5.35mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 23 nC @ 10 V |
Number of Elements per Chip | 1 |
Height | 1.1mm |
Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 754-5317
- Fabrikantnummer:
- BSC190N15NS3GATMA1
- Fabrikant:
- Infineon