onsemi PowerTrench Type N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-252 FDD86102
- RS-stocknr.:
- 759-9471
- Fabrikantnummer:
- FDD86102
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 2,94
(excl. BTW)
€ 3,56
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Verzending 3.318 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 1,47 | € 2,94 |
| 20 - 198 | € 1,27 | € 2,54 |
| 200 - 998 | € 1,10 | € 2,20 |
| 1000 + | € 0,965 | € 1,93 |
*prijsindicatie
- RS-stocknr.:
- 759-9471
- Fabrikantnummer:
- FDD86102
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | PowerTrench | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62W | |
| Typical Gate Charge Qg @ Vgs | 13.4nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series PowerTrench | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62W | ||
Typical Gate Charge Qg @ Vgs 13.4nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 2.39mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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