STMicroelectronics Type N-Channel MOSFET, 5.2 A, 800 V Enhancement, 3-Pin TO-263 STB7NK80ZT4
- RS-stocknr.:
- 760-9516
- Fabrikantnummer:
- STB7NK80ZT4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 14,22
(excl. BTW)
€ 17,205
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 50 stuk(s) vanaf 29 december 2025
- Plus verzending 285 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 2,844 | € 14,22 |
| 10 - 95 | € 2,41 | € 12,05 |
| 100 - 495 | € 1,888 | € 9,44 |
| 500 - 995 | € 1,604 | € 8,02 |
| 1000 + | € 1,322 | € 6,61 |
*prijsindicatie
- RS-stocknr.:
- 760-9516
- Fabrikantnummer:
- STB7NK80ZT4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Width | 10.4 mm | |
| Length | 10.75mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Width 10.4 mm | ||
Length 10.75mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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