onsemi Isolated 2 Type P, Type N-Channel Power MOSFET, 510 mA, 60 V Enhancement, 6-Pin SOT-23 NDC7001C

RS-stocknr.:: 761-4574
Fabrikantnummer:: NDC7001C
Fabrikant:: onsemi

onsemi Isolated 2 Type P, Type N-Channel Power MOSFET, 510 mA, 60 V Enhancement, 6-Pin SOT-23 NDC7001C

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Subtotaal (1 verpakking van 10 eenheden)*

€ 3,72

(excl. BTW)

€ 4,50

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

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Plus verzending 1.430 stuk(s) vanaf 02 januari 2026

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Aantal stuks	Per stuk	Per verpakking*
10 - 90	€ 0,372	€ 3,72
100 - 240	€ 0,32	€ 3,20
250 - 490	€ 0,278	€ 2,78
500 - 990	€ 0,245	€ 2,45
1000 +	€ 0,222	€ 2,22

*prijsindicatie

RS-stocknr.:: 761-4574
Fabrikantnummer:: NDC7001C
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Channel Type	Type P, Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	510mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	10Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.8V
	Minimum Operating Temperature	150°C
	Typical Gate Charge Qg @ Vgs	1.1nC
	Maximum Power Dissipation Pd	960mW
	Transistor Configuration	Isolated
	Maximum Operating Temperature	-55°C
	Length	3mm
	Standards/Approvals	No
	Width	1.7 mm
	Height	1mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Channel Type Type P, Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 510mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 10Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.8V
	Minimum Operating Temperature 150°C
	Typical Gate Charge Qg @ Vgs 1.1nC
	Maximum Power Dissipation Pd 960mW
	Transistor Configuration Isolated
	Maximum Operating Temperature -55°C
	Length 3mm
	Standards/Approvals No
	Width 1.7 mm
	Height 1mm
	Number of Elements per Chip 2
	Automotive Standard No

The NDC7001C is a dual N & P-Channel MOSFET that feature ON Semi’s DMOS technology. DMOS ensures fast switching, reliability and on-state resistance. These MOSFETs are a SOT-23 package type featuring 6 pins.

Features and benefits:

• DMOS Technology

• High saturation current

• High density cell design

• Copper lead frame for superior thermal and electrical capabilities

NDC7001C MOSFETs are ideal for;

• Low voltage

• Low current

• Switching

• Power supplies

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.