DiodesZetex DMN Type N-Channel MOSFET, 1.3 A, 20 V Enhancement, 3-Pin X2-DFN DMN2300UFB4-7B
- RS-stocknr.:
- 770-5128
- Fabrikantnummer:
- DMN2300UFB4-7B
- Fabrikant:
- DiodesZetex
Subtotaal (1 verpakking van 50 eenheden)*
€ 7,40
(excl. BTW)
€ 8,95
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 13.900 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 + | € 0,148 | € 7,40 |
*prijsindicatie
- RS-stocknr.:
- 770-5128
- Fabrikantnummer:
- DMN2300UFB4-7B
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | X2-DFN | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 1.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.05mm | |
| Width | 0.65 mm | |
| Height | 0.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type X2-DFN | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 1.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Operating Temperature 150°C | ||
Length 1.05mm | ||
Width 0.65 mm | ||
Height 0.35mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
N-Channel MOSFET, 12V to 28V, Diodes Inc
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