Renesas P-Channel MOSFET, 50 A, 60 V, 3-Pin TO-220 2SJ602-AZ
- RS-stocknr.:
- 772-5267P
- Fabrikantnummer:
- 2SJ602-AZ
- Fabrikant:
- Renesas Electronics
Bulkkorting beschikbaar
Subtotaal 25 eenheden (geleverd in een zak)*
€ 16,75
(excl. BTW)
€ 20,25
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk |
|---|---|
| 25 - 95 | € 0,67 |
| 100 - 195 | € 0,61 |
| 200 - 495 | € 0,556 |
| 500 + | € 0,538 |
*prijsindicatie
- RS-stocknr.:
- 772-5267P
- Fabrikantnummer:
- 2SJ602-AZ
- Fabrikant:
- Renesas Electronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Renesas Electronics | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 107 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 40 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10mm | |
| Width | 8.5mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 26 nC @ 10 V | |
| Height | 4.8mm | |
| Alles selecteren | ||
|---|---|---|
Merk Renesas Electronics | ||
Channel Type P | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 107 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10mm | ||
Width 8.5mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 26 nC @ 10 V | ||
Height 4.8mm | ||
P-Channel MOSFET, Renesas Electronics (NEC)
MOSFET Transistors, Renesas Electronics (NEC)
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