onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC FDS6912A
- RS-stocknr.:
- 772-9225
- Fabrikantnummer:
- FDS6912A
- Fabrikant:
- onsemi
Subtotaal (1 verpakking van 25 eenheden)*
€ 9,625
(excl. BTW)
€ 11,65
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 80,00
Wordt opgeheven
- Plus verzending 25 stuk(s) vanaf 30 maart 2026
- Laatste verzending 7.875 stuk(s) vanaf 06 april 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 + | € 0,385 | € 9,63 |
*prijsindicatie
- RS-stocknr.:
- 772-9225
- Fabrikantnummer:
- FDS6912A
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.75V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.75V | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 80 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC FDS3992