onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC FDS6912A

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€ 9,625

(excl. BTW)

€ 11,65

(incl. BTW)

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  • Plus verzending 25 stuk(s) vanaf 29 december 2025
  • Plus verzending 7.875 stuk(s) vanaf 05 januari 2026
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Verpakkingsopties
RS-stocknr.:
772-9225
Fabrikantnummer:
FDS6912A
Fabrikant:
onsemi
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Merk

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Series

PowerTrench

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

44mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

5.8nC

Forward Voltage Vf

0.75V

Maximum Power Dissipation Pd

1.6W

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Standards/Approvals

No

Length

5mm

Height

1.5mm

Width

4 mm

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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