onsemi Isolated μCool 2 Type P, Type N-Channel MOSFET, 4.6 A, 20 V Enhancement, 6-Pin WDFN NTLJD3119CTBG
- RS-stocknr.:
- 780-0655
- Fabrikantnummer:
- NTLJD3119CTBG
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 7,25
(excl. BTW)
€ 8,77
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 27 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,725 | € 7,25 |
| 100 - 240 | € 0,625 | € 6,25 |
| 250 - 490 | € 0,541 | € 5,41 |
| 500 - 990 | € 0,476 | € 4,76 |
| 1000 + | € 0,433 | € 4,33 |
*prijsindicatie
- RS-stocknr.:
- 780-0655
- Fabrikantnummer:
- NTLJD3119CTBG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | WDFN | |
| Series | μCool | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Forward Voltage Vf | 0.69V | |
| Maximum Power Dissipation Pd | 2.3W | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.75mm | |
| Length | 2mm | |
| Width | 2 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type WDFN | ||
Series μCool | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Forward Voltage Vf 0.69V | ||
Maximum Power Dissipation Pd 2.3W | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.75mm | ||
Length 2mm | ||
Width 2 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Gerelateerde Links
- onsemi Dual N/P-Channel MOSFET 4.6 A 6-Pin WDFN NTLJD3119CTBG
- onsemi Dual P-Channel MOSFET 20 V, 8-Pin ChipFET NTHD4102PT1G
- onsemi P-Channel MOSFET 60 V, 8-Pin WDFN NTTFS5116PLTAG
- onsemi P-Channel MOSFET 60 V, 8-Pin WDFN NVTFS5124PLTAG
- onsemi P-Channel MOSFET 60 V, 8-Pin WDFN NVTFS5116PLTAG
- onsemi Dual N-Channel MOSFET 30 V, 6-Pin WDFN NTLJD4116NT1G
- onsemi Dual N-Channel MOSFET 30 V, 6-Pin WDFN FDMA2002NZ
- onsemi FDMB3800N Dual Digital Transistor, 8-Pin WDFN