onsemi Type N-Channel MOSFET, 2.2 A, 60 V Enhancement, 3-Pin SOT-23 NTR5198NLT1G
- RS-stocknr.:
- 796-1381
- Fabrikantnummer:
- NTR5198NLT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 4,95
(excl. BTW)
€ 6,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 50 stuk(s) vanaf 19 januari 2026
- Plus verzending 3.000 stuk(s) vanaf 20 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 75 | € 0,198 | € 4,95 |
| 100 - 225 | € 0,17 | € 4,25 |
| 250 - 475 | € 0,148 | € 3,70 |
| 500 - 975 | € 0,13 | € 3,25 |
| 1000 + | € 0,118 | € 2,95 |
*prijsindicatie
- RS-stocknr.:
- 796-1381
- Fabrikantnummer:
- NTR5198NLT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 155mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 900mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.1nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.01mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 155mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 900mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.1nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.01mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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