onsemi RFD3055LESM Type N-Channel MOSFET, 11 A, 60 V Enhancement, 3-Pin TO-252 RFD3055LESM9A

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  • Plus verzending 10 stuk(s) vanaf 29 december 2025
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1000 +€ 0,224€ 2,24

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Verpakkingsopties
RS-stocknr.:
802-2159
Fabrikantnummer:
RFD3055LESM9A
Fabrikant:
onsemi
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Merk

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

60V

Series

RFD3055LESM

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

107mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

9.4nC

Maximum Power Dissipation Pd

38W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

175°C

Length

6.73mm

Standards/Approvals

No

Width

6.22 mm

Height

2.39mm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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