IXYS HiperFET, Polar3 N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247 IXFH20N50P3

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RS-stocknr.:
802-4363
Fabrikantnummer:
IXFH20N50P3
Fabrikant:
IXYS
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Merk

IXYS

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

500 V

Package Type

TO-247

Series

HiperFET, Polar3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

380 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.3mm

Transistor Material

Si

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

16.26mm

Height

21.46mm

Minimum Operating Temperature

-55 °C

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series


A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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