N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXYS IXFX80N60P3
- RS-stocknr.:
- 802-4502
- Fabrikantnummer:
- IXFX80N60P3
- Fabrikant:
- IXYS
31 op voorraad - levertijd is 1 werkdag(en).
Prijs Per stuk
€ 23,95
(excl. BTW)
€ 28,98
(incl. BTW)
| Aantal stuks | Per stuk |
| 1 - 4 | € 23,95 |
| 5 - 9 | € 22,74 |
| 10 - 29 | € 21,75 |
| 30 - 89 | € 20,14 |
| 90 + | € 18,54 |
- RS-stocknr.:
- 802-4502
- Fabrikantnummer:
- IXFX80N60P3
- Fabrikant:
- IXYS
Wetgeving en compliance
Productomschrijving
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage | 600 V |
| Series | HiperFET, Polar3 |
| Package Type | PLUS247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 70 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.3 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Length | 16.13mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Width | 5.21mm |
| Typical Gate Charge @ Vgs | 190 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Height | 21.34mm |
| Minimum Operating Temperature | -55 °C |