onsemi Isolated PowerTrench 2 Type N-Channel Dual N-Channel Power Trench MOSFET, 12 A, 40 V Enhancement, 8-Pin Power 33
- RS-stocknr.:
- 806-3504
- Fabrikantnummer:
- FDMC8030
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 9,28
(excl. BTW)
€ 11,23
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 80,00
Laatste voorraad RS
- 355 stuk(s) klaar voor verzending vanaf een andere locatie
- Laatste verzending 1.645 stuk(s) vanaf 08 april 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 25 | € 1,856 | € 9,28 |
| 30 - 145 | € 1,658 | € 8,29 |
| 150 - 745 | € 1,464 | € 7,32 |
| 750 - 1495 | € 1,262 | € 6,31 |
| 1500 + | € 1,082 | € 5,41 |
*prijsindicatie
- RS-stocknr.:
- 806-3504
- Fabrikantnummer:
- FDMC8030
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | Dual N-Channel Power Trench MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | PowerTrench | |
| Package Type | Power 33 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.9W | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead-Free and RoHS | |
| Length | 3mm | |
| Height | 0.75mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type Dual N-Channel Power Trench MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series PowerTrench | ||
Package Type Power 33 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.9W | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead-Free and RoHS | ||
Length 3mm | ||
Height 0.75mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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