onsemi PowerTrench N-Channel MOSFET, 600 mA, 20 V, 3-Pin SOT-523 FDY302NZ
- RS-stocknr.:
- 807-0729
- Fabrikantnummer:
- FDY302NZ
- Fabrikant:
- onsemi
Niet beschikbaar
RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 807-0729
- Fabrikantnummer:
- FDY302NZ
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 600 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-523 (SC-89) | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.2 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 625 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Transistor Material | Si | |
| Width | 0.98mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 0.8 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 1.7mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.78mm | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 600 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-523 (SC-89) | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.2 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 625 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Transistor Material Si | ||
Width 0.98mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 0.8 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Length 1.7mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.78mm | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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