onsemi BS270 Type N-Channel Field Effect Transistor, 400 mA, 60 V Enhancement, 3-Pin TO-92 BS270
- RS-stocknr.:
- 807-5184
- Fabrikantnummer:
- BS270
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 50 eenheden)*
€ 16,55
(excl. BTW)
€ 20,05
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 1.400 stuk(s) vanaf 26 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 450 | € 0,331 | € 16,55 |
| 500 - 950 | € 0,286 | € 14,30 |
| 1000 + | € 0,247 | € 12,35 |
*prijsindicatie
- RS-stocknr.:
- 807-5184
- Fabrikantnummer:
- BS270
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Field Effect Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | BS270 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 625mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.7mm | |
| Standards/Approvals | No | |
| Width | 3.93 mm | |
| Height | 4.7mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Field Effect Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series BS270 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 625mW | ||
Maximum Operating Temperature 150°C | ||
Length 4.7mm | ||
Standards/Approvals No | ||
Width 3.93 mm | ||
Height 4.7mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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