onsemi PowerTrench Type N-Channel MOSFET, 11.5 A, 60 V Enhancement, 3-Pin TO-252 FDD5353
- RS-stocknr.:
- 809-0896
- Fabrikantnummer:
- FDD5353
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 8,47
(excl. BTW)
€ 10,25
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,694 | € 8,47 |
| 50 - 95 | € 1,462 | € 7,31 |
| 100 - 495 | € 1,268 | € 6,34 |
| 500 - 995 | € 1,114 | € 5,57 |
| 1000 + | € 1,012 | € 5,06 |
*prijsindicatie
- RS-stocknr.:
- 809-0896
- Fabrikantnummer:
- FDD5353
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | PowerTrench | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 69W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series PowerTrench | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 69W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi PowerTrench N-Channel MOSFET 60 V, 3-Pin DPAK FDD5353
- onsemi PowerTrench N-Channel MOSFET 136 A 3-Pin DPAK FDD86540
- onsemi PowerTrench N-Channel MOSFET 100 V, 3-Pin DPAK FDD86102
- onsemi PowerTrench N-Channel MOSFET 100 V, 3-Pin DPAK FDD86102LZ
- onsemi PowerTrench N-Channel MOSFET 100 V, 3-Pin DPAK FDD850N10L
- onsemi PowerTrench N-Channel MOSFET 40 V, 3-Pin DPAK FDD8647L
- onsemi PowerTrench N-Channel MOSFET 30 V, 3-Pin DPAK FDD8870
- onsemi PowerTrench N-Channel MOSFET 30 V, 3-Pin DPAK FDD8896
