N-Channel MOSFET, 1.2 A, 30 V, 6-Pin SC-89-6 Vishay SI1070X-T1-GE3

RS-stocknr.:: 812-3041
Fabrikantnummer:: SI1070X-T1-GE3
Fabrikant:: Vishay

N-Channel MOSFET, 1.2 A, 30 V, 6-Pin SC-89-6 Vishay SI1070X-T1-GE3

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RS-stocknr.:: 812-3041
Fabrikantnummer:: SI1070X-T1-GE3
Fabrikant:: Vishay

Si1070X, N-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	1.2 A
Maximum Drain Source Voltage	30 V
Package Type	SC-89-6
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	140 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.7V
Maximum Power Dissipation	236 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-12 V, +12 V
Number of Elements per Chip	1
Width	1.2mm
Transistor Material	Si
Length	1.7mm
Typical Gate Charge @ Vgs	3.8 nC @ 4.5 V
Maximum Operating Temperature	+150 °C
Height	0.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 1.2 A, 30 V, 6-Pin SC-89-6 Vishay SI1070X-T1-GE3

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor