DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 3.1 A, 30 V Enhancement, 8-Pin ZXMHC3A01T8TA
- RS-stocknr.:
- 823-1877
- Fabrikantnummer:
- ZXMHC3A01T8TA
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 10,80
(excl. BTW)
€ 13,05
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 865 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 10 | € 2,16 | € 10,80 |
| 15 - 45 | € 1,93 | € 9,65 |
| 50 - 245 | € 1,712 | € 8,56 |
| 250 - 495 | € 1,48 | € 7,40 |
| 500 + | € 1,286 | € 6,43 |
*prijsindicatie
- RS-stocknr.:
- 823-1877
- Fabrikantnummer:
- ZXMHC3A01T8TA
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 330mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 3.9nC | |
| Maximum Power Dissipation Pd | 1.7W | |
| Forward Voltage Vf | 0.95V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Full Bridge | |
| Height | 1.6mm | |
| Length | 6.7mm | |
| Width | 3.7 mm | |
| Standards/Approvals | MIL-STD-202, UL 94V-0, RoHS, AEC-Q101, J-STD-020 | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 330mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 3.9nC | ||
Maximum Power Dissipation Pd 1.7W | ||
Forward Voltage Vf 0.95V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Full Bridge | ||
Height 1.6mm | ||
Length 6.7mm | ||
Width 3.7 mm | ||
Standards/Approvals MIL-STD-202, UL 94V-0, RoHS, AEC-Q101, J-STD-020 | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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