N-Channel MOSFET, 6.5 A, 30 V, 3 + Tab-Pin SOT-223 Infineon IRLL3303TRPBF

RS-stocknr.:: 830-3313
Fabrikantnummer:: IRLL3303TRPBF
Fabrikant:: Infineon

N-Channel MOSFET, 6.5 A, 30 V, 3 + Tab-Pin SOT-223 Infineon IRLL3303TRPBF

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RS-stocknr.:: 830-3313
Fabrikantnummer:: IRLL3303TRPBF
Fabrikant:: Infineon

Datasheets

Wetgeving en compliance

Land van herkomst:: CN

Productomschrijving

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specificaties

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	6.5 A
Maximum Drain Source Voltage	30 V
Package Type	SOT-223
Mounting Type	Surface Mount
Pin Count	3 + Tab
Maximum Drain Source Resistance	45 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Length	6.7mm
Width	3.7mm
Typical Gate Charge @ Vgs	34 nC @ 10 V
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Height	1.739mm
Minimum Operating Temperature	-55 °C
Series	HEXFET

RS-stocknr.:: 830-3313
Fabrikantnummer:: IRLL3303TRPBF
Fabrikant:: Infineon