Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-220

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RS-stocknr.:
831-2783
Fabrikantnummer:
IRF1010EZPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

84A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

140W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

58nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

10.67mm

Standards/Approvals

No

Height

16.51mm

Width

4.83 mm

Automotive Standard

No

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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