Infineon CoolMOS C6 N-Channel MOSFET, 20 A, 700 V, 3-Pin I2PAK IPI65R190C6XKSA1
- RS-stocknr.:
- 857-6713
- Fabrikantnummer:
- IPI65R190C6XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 500 eenheden)*
€ 830,00
(excl. BTW)
€ 1.005,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 500 - 500 | € 1,66 | € 830,00 |
| 1000 - 2000 | € 1,617 | € 808,50 |
| 2500 + | € 1,577 | € 788,50 |
*prijsindicatie
- RS-stocknr.:
- 857-6713
- Fabrikantnummer:
- IPI65R190C6XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 700 V | |
| Series | CoolMOS C6 | |
| Package Type | I2PAK (TO-262) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 151 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 10.36mm | |
| Typical Gate Charge @ Vgs | 73 nC @ 10 V | |
| Width | 4.57mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 9.45mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 700 V | ||
Series CoolMOS C6 | ||
Package Type I2PAK (TO-262) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 151 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 73 nC @ 10 V | ||
Width 4.57mm | ||
Maximum Operating Temperature +150 °C | ||
Height 9.45mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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