STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK STH150N10F7-2
- RS-stocknr.:
- 860-7523
- Fabrikantnummer:
- STH150N10F7-2
- Fabrikant:
- STMicroelectronics
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Subtotaal (1 verpakking van 2 eenheden)*
€ 7,15
(excl. BTW)
€ 8,652
(incl. BTW)
Voeg 26 eenheden toe voor gratis bezorging
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- Verzending vanaf 14 september 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 3,575 | € 7,15 |
| 10 - 18 | € 3,395 | € 6,79 |
| 20 - 48 | € 3,06 | € 6,12 |
| 50 - 98 | € 2,755 | € 5,51 |
| 100 + | € 2,62 | € 5,24 |
*prijsindicatie
- RS-stocknr.:
- 860-7523
- Fabrikantnummer:
- STH150N10F7-2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | H2PAK | |
| Series | DeepGate, STripFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 117nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.57 mm | |
| Height | 4.8mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type H2PAK | ||
Series DeepGate, STripFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 117nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Operating Temperature 175°C | ||
Width 10.57 mm | ||
Height 4.8mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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