onsemi QFET Type P-Channel MOSFET, 3.7 A, 200 V Enhancement, 3-Pin IPAK (TO-251)
- RS-stocknr.:
- 862-8782
- Fabrikantnummer:
- FQU5P20TU
- Fabrikant:
- onsemi
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 862-8782
- Fabrikantnummer:
- FQU5P20TU
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | QFET | |
| Package Type | IPAK (TO-251) | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 45W | |
| Forward Voltage Vf | 5V | |
| Maximum Operating Temperature | 150°C | |
| Height | 7.57mm | |
| Width | 2.5 mm | |
| Length | 6.8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series QFET | ||
Package Type IPAK (TO-251) | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 45W | ||
Forward Voltage Vf 5V | ||
Maximum Operating Temperature 150°C | ||
Height 7.57mm | ||
Width 2.5 mm | ||
Length 6.8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi QFET P-Channel MOSFET 200 V, 3-Pin IPAK FQU5P20TU
- onsemi QFET N-Channel MOSFET 100 V, 3-Pin IPAK FQU13N10LTU
- onsemi QFET P-Channel MOSFET 200 V, 3-Pin SOT-223 FQT3P20TF
- onsemi QFET P-Channel MOSFET 200 V, 3-Pin TO-220F FQPF7P20
- onsemi QFET P-Channel MOSFET 200 V, 3-Pin TO-220F FQPF5P20
- onsemi QFET N-Channel MOSFET 200 V, 3-Pin D2PAK FQB19N20LTM
- onsemi QFET N-Channel MOSFET 200 V, 3-Pin D2PAK FQB34N20LTM
- onsemi QFET N-Channel MOSFET 200 V, 3-Pin DPAK FQD12N20LTM
