onsemi FQD7P20TM Type P-Channel MOSFET, 5.7 A, 200 V Enhancement, 3-Pin TO-252

RS-stocknr.:: 864-4948
Fabrikantnummer:: FQD7P20TM
Fabrikant:: onsemi

onsemi FQD7P20TM Type P-Channel MOSFET, 5.7 A, 200 V Enhancement, 3-Pin TO-252

Bulkkorting beschikbaar

Subtotaal (1 rol van 2500 eenheden)*

€ 1.112,50

(excl. BTW)

€ 1.345,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Tekort aan aanbod

2.500 stuk(s) klaar voor verzending vanaf een andere locatie

Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.

Aantal stuks	Per stuk	Per rol*
2500 - 10000	€ 0,445	€ 1.112,50
12500 - 22500	€ 0,43	€ 1.075,00
25000 +	€ 0,419	€ 1.047,50

*prijsindicatie

RS-stocknr.:: 864-4948
Fabrikantnummer:: FQD7P20TM
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	5.7A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-252
	Series	FQD7P20TM
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	690mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Power Dissipation Pd	2.5W
	Typical Gate Charge Qg @ Vgs	19nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-5V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	6.1 mm
	Length	6.6mm
	Height	2.3mm
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 5.7A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-252
	Series FQD7P20TM
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 690mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Power Dissipation Pd 2.5W
	Typical Gate Charge Qg @ Vgs 19nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -5V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 6.1 mm
	Length 6.6mm
	Height 2.3mm
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.