Nexperia Isolated Trench MOSFET 2 Type N-Channel MOSFET, 350 mA, 30 V Enhancement, 6-Pin SC-88 NX3008NBKS,115
- RS-stocknr.:
- 865-2182
- Fabrikantnummer:
- NX3008NBKS,115
- Fabrikant:
- Nexperia
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 100 eenheden)*
€ 15,30
(excl. BTW)
€ 18,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 06 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 100 - 100 | € 0,153 | € 15,30 |
| 200 - 400 | € 0,137 | € 13,70 |
| 500 + | € 0,122 | € 12,20 |
*prijsindicatie
- RS-stocknr.:
- 865-2182
- Fabrikantnummer:
- NX3008NBKS,115
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-88 | |
| Series | Trench MOSFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.8Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.52nC | |
| Maximum Power Dissipation Pd | 445mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Width | 1.35 mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 2.2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-88 | ||
Series Trench MOSFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.8Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.52nC | ||
Maximum Power Dissipation Pd 445mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Width 1.35 mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 2.2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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