DiodesZetex Isolated 2 Type N, Type P-Channel MOSFET, 9.6 A, 35 V Enhancement, 3-Pin TO-252 DMG4511SK4-13
- RS-stocknr.:
- 885-5482
- Fabrikantnummer:
- DMG4511SK4-13
- Fabrikant:
- DiodesZetex
Subtotaal (1 verpakking van 20 eenheden)*
€ 9,14
(excl. BTW)
€ 11,06
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 7.420 stuk(s) vanaf 29 december 2025
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 + | € 0,457 | € 9,14 |
*prijsindicatie
- RS-stocknr.:
- 885-5482
- Fabrikantnummer:
- DMG4511SK4-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 9.6A | |
| Maximum Drain Source Voltage Vds | 35V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 8.9W | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 8.8nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Length | 6.7mm | |
| Width | 6.2 mm | |
| Standards/Approvals | J-STD-020, MIL-STD-202, UL 94V-0, RoHS, AEC-Q101 | |
| Height | 2.39mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 9.6A | ||
Maximum Drain Source Voltage Vds 35V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 8.9W | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 8.8nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Length 6.7mm | ||
Width 6.2 mm | ||
Standards/Approvals J-STD-020, MIL-STD-202, UL 94V-0, RoHS, AEC-Q101 | ||
Height 2.39mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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