N-Channel MOSFET, 83 A, 150 V, 3-Pin TO-220 Infineon IPP111N15N3GXKSA1
- RS-stocknr.:
- 897-7412
- Fabrikantnummer:
- IPP111N15N3GXKSA1
- Fabrikant:
- Infineon
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 21-05-2024, met een levertijd van 2 à 3 werkdagen.
Prijs Elk (in een pakket van 4)
€ 4,883
(excl. BTW)
€ 5,908
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 4 - 16 | € 4,883 | € 19,532 |
| 20 - 36 | € 4,64 | € 18,56 |
| 40 - 96 | € 4,443 | € 17,772 |
| 100 - 196 | € 4,248 | € 16,992 |
| 200 + | € 3,955 | € 15,82 |
| *prijsindicatie | ||
- RS-stocknr.:
- 897-7412
- Fabrikantnummer:
- IPP111N15N3GXKSA1
- Fabrikant:
- Infineon
Wetgeving en compliance
Productomschrijving
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 83 A |
| Maximum Drain Source Voltage | 150 V |
| Package Type | TO-220 |
| Series | OptiMOS 3 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 11.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 214 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Length | 10.36mm |
| Typical Gate Charge @ Vgs | 41 nC @ 10 V |
| Width | 4.57mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 15.95mm |
| Forward Diode Voltage | 1.2V |