- RS-stocknr.:
- 897-7412P
- Fabrikantnummer:
- IPP111N15N3GXKSA1
- Fabrikant:
- Infineon
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 13-05-2025, met een levertijd van 2 à 3 werkdagen.
Prijs Per stuk (geleverd in een tube)
€ 4,64
(excl. BTW)
€ 5,61
(incl. BTW)
Aantal stuks | Per stuk |
20 - 36 | € 4,64 |
40 - 96 | € 4,443 |
100 - 196 | € 4,248 |
200 + | € 3,955 |
- RS-stocknr.:
- 897-7412P
- Fabrikantnummer:
- IPP111N15N3GXKSA1
- Fabrikant:
- Infineon
Wetgeving en compliance
Productomschrijving
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 83 A |
Maximum Drain Source Voltage | 150 V |
Series | OptiMOS 3 |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 11.3 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 214 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 4.57mm |
Typical Gate Charge @ Vgs | 41 nC @ 10 V |
Length | 10.36mm |
Maximum Operating Temperature | +175 °C |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Height | 15.95mm |
Forward Diode Voltage | 1.2V |