onsemi BSS138W Type N-Channel MOSFET, 210 mA, 50 V Enhancement, 3-Pin SC-70 BSS138W
- RS-stocknr.:
- 903-4112
- Artikelnummer Distrelec:
- 304-44-720
- Fabrikantnummer:
- BSS138W
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 100 eenheden)*
€ 7,50
(excl. BTW)
€ 9,10
(incl. BTW)
Voeg 1400 eenheden toe voor gratis bezorging
Op voorraad
- 15.500 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 100 - 400 | € 0,075 | € 7,50 |
| 500 - 900 | € 0,065 | € 6,50 |
| 1000 + | € 0,056 | € 5,60 |
*prijsindicatie
- RS-stocknr.:
- 903-4112
- Artikelnummer Distrelec:
- 304-44-720
- Fabrikantnummer:
- BSS138W
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 210mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | BSS138W | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.1nC | |
| Maximum Power Dissipation Pd | 340mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Length | 2mm | |
| Width | 1.25 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 210mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Series BSS138W | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.1nC | ||
Maximum Power Dissipation Pd 340mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Length 2mm | ||
Width 1.25 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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