onsemi Isolated 2 Type N-Channel Power MOSFET, 3.5 A, 60 V Enhancement, 8-Pin SOIC NDS9945
- RS-stocknr.:
- 903-4374
- Fabrikantnummer:
- NDS9945
- Fabrikant:
- onsemi
Subtotaal (1 verpakking van 10 eenheden)*
€ 5,61
(excl. BTW)
€ 6,79
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Plus verzending 2.210 stuk(s) vanaf 29 december 2025
- Laatste verzending 200 stuk(s) vanaf 05 januari 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 + | € 0,561 | € 5,61 |
*prijsindicatie
- RS-stocknr.:
- 903-4374
- Fabrikantnummer:
- NDS9945
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 12.9nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Height | 1.57mm | |
| Standards/Approvals | No | |
| Length | 4.9mm | |
| Width | 3.9 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 12.9nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Height 1.57mm | ||
Standards/Approvals No | ||
Length 4.9mm | ||
Width 3.9 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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