SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK Wolfspeed C2M1000170J

RS-stocknr.:: 915-8833P
Fabrikantnummer:: C2M1000170J
Fabrikant:: Wolfspeed

SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK Wolfspeed C2M1000170J

24 op voorraad - levertijd is 1 werkdag(en).

Toegevoegd

Prijs Per stuk (geleverd in een tube)

€ 7,12

(excl. BTW)

€ 8,62

(incl. BTW)

Aantal stuks	Per stuk
10 - 18	€ 7,12
20 - 48	€ 6,95
50 - 98	€ 6,765
100 +	€ 6,57

RS-stocknr.:: 915-8833P
Fabrikantnummer:: C2M1000170J
Fabrikant:: Wolfspeed

Datasheets

Wetgeving en compliance

Land van herkomst:: CN

Productomschrijving

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Specificaties

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	5.3 A
Maximum Drain Source Voltage	1700 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	1.4 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	78 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-10 V, +25 V
Length	10.23mm
Typical Gate Charge @ Vgs	13 nC @ 20 V
Width	10.99mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Transistor Material	SiC
Height	4.57mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	3.8V

RS-stocknr.:: 915-8833P
Fabrikantnummer:: C2M1000170J
Fabrikant:: Wolfspeed