IXYS X2-Class N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2
- RS-stocknr.:
- 917-1457
- Fabrikantnummer:
- IXTH12N65X2
- Fabrikant:
- IXYS
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 917-1457
- Fabrikantnummer:
- IXTH12N65X2
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | X2-Class | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 300 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 180 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 17.7 nC @ 10 V | |
| Length | 16.24mm | |
| Width | 21.45mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 5.3mm | |
| Forward Diode Voltage | 1.4V | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 650 V | ||
Series X2-Class | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 300 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 180 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 17.7 nC @ 10 V | ||
Length 16.24mm | ||
Width 21.45mm | ||
Minimum Operating Temperature -55 °C | ||
Height 5.3mm | ||
Forward Diode Voltage 1.4V | ||
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Gerelateerde Links
- IXYS X2-Class N-Channel MOSFET 650 V, 3-Pin TO-247 IXTH12N65X2
- IXYS X2-Class N-Channel MOSFET 650 V, 3-Pin TO-247 IXTH80N65X2
- IXYS X2-Class N-Channel MOSFET 650 V, 3-Pin TO-247 IXTH34N65X2
- IXYS X2-Class N-Channel MOSFET 650 V, 3-Pin TO-247 IXTH62N65X2
- IXYS X2-Class N-Channel MOSFET 650 V, 3-Pin TO-247 IXTH48N65X2
- IXYS HiperFET 34 A 3-Pin TO-247 IXFH34N65X2
- IXYS HiperFET 46 A 3-Pin TO-247 IXFH46N65X2
- IXYS X2-Class N-Channel MOSFET 650 V, 3-Pin PLUS247 IXTX120N65X2