Vishay IRF510 Type N-Channel Power MOSFET, 5.6 A, 100 V Enhancement, 3-Pin TO-220AB IRF510PBF

RS-stocknr.:: 919-0023
Fabrikantnummer:: IRF510PBF
Fabrikant:: Vishay

Vishay IRF510 Type N-Channel Power MOSFET, 5.6 A, 100 V Enhancement, 3-Pin TO-220AB IRF510PBF

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Subtotaal (1 tube van 50 eenheden)*

€ 36,20

(excl. BTW)

€ 43,80

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

500 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 3.000 stuk(s) vanaf 13 augustus 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 0,724	€ 36,20
100 - 200	€ 0,615	€ 30,75
250 +	€ 0,543	€ 27,15

*prijsindicatie

RS-stocknr.:: 919-0023
Fabrikantnummer:: IRF510PBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5.6A
	Maximum Drain Source Voltage Vds	100V
	Series	IRF510
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	540mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	2.5V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	8.3nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	43W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Width	4.7mm
	Height	9.01mm
	Length	10.41mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5.6A
	Maximum Drain Source Voltage Vds 100V
	Series IRF510
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 540mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 2.5V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 8.3nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 43W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Width 4.7mm
	Height 9.01mm
	Length 10.41mm
	Automotive Standard No

Land van herkomst:: CN

Vishay IRF510 Series Power MOSFET, 100V Maximum Drain Source Voltage, 43W Maximum Power Dissipation - IRF510PBF

This power MOSFET is a single N-channel enhancement device designed for switching and amplification tasks in through‑hole assemblies. It operates across a wide temperature span suitable for demanding environments and accepts standard gate‑drive levels to control medium‑power loads. The component is supplied in a TO‑220AB package for straightforward mounting and thermal interfacing on heatsinks.

Features and Benefits:

• 100V drain voltage supports high‑voltage switching applications
• 5.6A continuous drain current handles moderate load currents
• 540mΩ Rds(on) reduces conduction losses for efficient switching
• 43W power dissipation enables sustained power handling with cooling
• 8.3nC typical gate charge allows reasonably fast switching response
• ±20V gate tolerance accommodates common gate‑drive ranges

Applications

• Suitable for amplifier circuit output stages in audio designs
• Ideal for general‑purpose switching in power supplies
• Used with heatsinks for motor control and power conversion
• Can be used for educational and prototyping through‑hole projects
• Useful as a transistor replacement part in repair work

What ambient temperatures can the device withstand in operation?

It is specified to function from -55°C up to 175°C junction temperature for use in high‑temperature assemblies.

How many pins does the component present for PCB mounting?

The device is provided with three pins configured for through‑hole mounting in a TO‑220AB footprint.

What package form factor should I prepare a heatsink for?

The TO‑220AB enclosure offers a flat rear tab suitable for bolting to a heatsink to improve thermal dissipation.

Is the component suitable for automotive‑standard requirements?

The device is not specified to meet automotive approval standards and should not be assumed compliant for regulated vehicle use.