SI2318CDS-T1-GE3 N-Channel MOSFET, 5.6 A, 40 V, 3-Pin SOT-23 Vishay

  • RS-stocknr. 919-4205
  • Fabrikantnummer SI2318CDS-T1-GE3
  • Fabrikant Vishay
Datasheets
Wetgeving en compliance
Conform
Land van herkomst: CN
Productomschrijving

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specificaties
Kenmerk Waarde
Channel Type N
Maximum Continuous Drain Current 5.6 A
Maximum Drain Source Voltage 40 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 51 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 2.1 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Length 3.04mm
Minimum Operating Temperature -55 °C
Width 1.4mm
Maximum Operating Temperature +150 °C
Height 1.02mm
Transistor Material Si
Typical Gate Charge @ Vgs 5.8 nC @ 10 V
117000 op voorraad - levertijd is 2 werkdag(en).
Prijs Each (On a Reel of 3000)
0,125
(excl. BTW)
0,151
(incl. BTW)
Aantal stuks
Per stuk
Per reel*
3000 +
€ 0,125
€ 375,00
*prijsindicatie