SI2318CDS-T1-GE3 N-Channel MOSFET, 5.6 A, 40 V, 3-Pin SOT-23 Vishay

  • RS-stocknr. 919-4205
  • Fabrikantnummer SI2318CDS-T1-GE3
  • Fabrikant Vishay
Wetgeving en compliance
Land van herkomst: CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Kenmerk Waarde
Channel Type N
Maximum Continuous Drain Current 5.6 A
Maximum Drain Source Voltage 40 V
Maximum Drain Source Resistance 51 mΩ
Minimum Gate Threshold Voltage 1.2V
Maximum Gate Source Voltage -20 V, +20 V
Package Type SOT-23
Mounting Type Surface Mount
Transistor Configuration Single
Pin Count 3
Channel Mode Enhancement
Maximum Power Dissipation 2.1 W
Length 3.04mm
Height 1.02mm
Maximum Operating Temperature +150 °C
Width 1.4mm
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 5.8 nC @ 10 V
Transistor Material Si
117000 op voorraad - levertijd is 2 werkdag(en).
Prijs Each (On a Reel of 3000)
(excl. BTW)
(incl. BTW)
Aantal stuks
Per stuk
Per reel*
3000 +
€ 0,125
€ 375,00