Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 919-4763
Fabrikantnummer:: IRF3205PBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220

Bulkkorting beschikbaar

Subtotaal (1 tube van 50 eenheden)*

€ 61,35

(excl. BTW)

€ 74,25

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Beperkte voorraad

500 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,227	€ 61,35
100 - 200	€ 0,982	€ 49,10
250 - 450	€ 0,921	€ 46,05
500 - 950	€ 0,859	€ 42,95
1000 +	€ 0,798	€ 39,90

*prijsindicatie

RS-stocknr.:: 919-4763
Fabrikantnummer:: IRF3205PBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	110A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	8mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	146nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	200W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	8.77mm
	Width	4.69 mm
	Length	10.54mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 110A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 8mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 146nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 200W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 8.77mm
	Width 4.69 mm
	Length 10.54mm
	Automotive Standard No

Land van herkomst:: CN

Infineon HEXFET Series MOSFET, 110A Maximum Continuous Drain Current, 55V Maximum Drain Source Voltage - IRF3205PBF

This HEXFET MOSFET is a high-performance power electronics component designed for demanding applications. It features an N-channel configuration with a maximum continuous drain current of 110A and a maximum drain-source voltage of 55V. The TO-220AB package ensures efficient thermal management and is suitable for use in a variety of industrial settings.

Features & Benefits

• Capable of operating at high temperatures up to +175°C

• Offers fast switching characteristics for improved performance

• Excellent avalanche rating for added durability

• Enhancement mode design provides stable operation

• Designed for ease of use in through-hole mounting

Applications

• Used for power conversion in power supplies

• Suitable for motor control

• Utilised in battery management systems

• Applied in high-frequency switching circuits

• Integrated into consumer electronics power systems

What thermal characteristics should be considered for this component?

The thermal resistance from junction-to-case is 0.75°C/W, and the case-to-sink can be as low as 0.50°C/W when applied to a flat, greased surface. This is essential for maintaining optimal performance during high-load scenarios.

How can the specifications influence overall performance?

The low on-resistance and high continuous drain current capability allow for reduced power loss and improved thermal efficiency, leading to enhanced reliability in various applications.

What methods can be applied for effective heat dissipation?

Utilising a heatsink in conjunction with the TO-220AB package can vastly improve heat dissipation during operation, ensuring that the device remains within safe thermal limits.