STMicroelectronics 650 V 8 A Diode 2-Pin TO-220
- RS-stocknr.:
- 164-6987P
- Fabrikantnummer:
- STPSC8065D
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal 25 eenheden (geleverd in een buis)*
€ 43,90
(excl. BTW)
€ 53,125
(incl. BTW)
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- Verzending vanaf 01 juli 2026
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Aantal stuks | Per stuk |
|---|---|
| 25 - 45 | € 1,756 |
| 50 - 120 | € 1,712 |
| 125 - 245 | € 1,668 |
| 250 + | € 1,628 |
*prijsindicatie
- RS-stocknr.:
- 164-6987P
- Fabrikantnummer:
- STPSC8065D
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | STPSC | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 750μA | |
| Maximum Forward Voltage Vf | 1.65V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Height | 15.75mm | |
| Diameter | 3.75 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series STPSC | ||
Pin Count 2 | ||
Peak Reverse Current Ir 750μA | ||
Maximum Forward Voltage Vf 1.65V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Height 15.75mm | ||
Diameter 3.75 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
Operating Tj from -40 °C to 175 °C