onsemi 650 V 27 A Schottky Diode Schottky 3-Pin D2PAK FFSB1065B-F085

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RS-stocknr.:
185-9177
Fabrikantnummer:
FFSB1065B-F085
Fabrikant:
onsemi
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Merk

onsemi

Product Type

Schottky Diode

Mount Type

Surface

Package Type

TO-263

Maximum Continuous Forward Current If

27A

Peak Reverse Repetitive Voltage Vrrm

650V

Series

EliteSiC

Diode Configuration

Single

Rectifier Type

Schottky

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Forward Voltage Vf

2.4V

Peak Non-Repetitive Forward Surge Current Ifsm

45A

Peak Reverse Current Ir

160A

Maximum Operating Temperature

175°C

Length

10.67mm

Height

4.58mm

Width

9.65 mm

Standards/Approvals

Pb-Free, RoHS

Automotive Standard

AEC-Q101

Niet conform

Land van herkomst:
CN

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, D2PAK

Automotive Silicon Carbide (SiC) Schottky Diode, 650 V


Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.

Max Junction Temperature 175 oC

High Surge Current Capacity

Positive Temperature Coefficient

Ease of Paralleling

No Reverse Recovery / No Forward Recovery

Applications

Automotive HEV-EV Onboard Chargers

Automotive HEV-EV DC-DC Converters

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