STMicroelectronics 650 V 10 A Diode 2-Pin PowerFLAT
- RS-stocknr.:
- 203-3485P
- Fabrikantnummer:
- STPSC10H065DLF
- Fabrikant:
- STMicroelectronics
Subtotaal 5 eenheden (geleverd op een doorlopende strip)*
€ 19,49
(excl. BTW)
€ 23,585
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 435 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 5 + | € 3,898 |
*prijsindicatie
- RS-stocknr.:
- 203-3485P
- Fabrikantnummer:
- STPSC10H065DLF
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | PowerFLAT | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 850A | |
| Peak Reverse Current Ir | 85μA | |
| Maximum Forward Voltage Vf | 1.95V | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.75mm | |
| Standards/Approvals | RoHS | |
| Length | 7.9mm | |
| Width | 7.9 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type PowerFLAT | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 850A | ||
Peak Reverse Current Ir 85μA | ||
Maximum Forward Voltage Vf 1.95V | ||
Maximum Operating Temperature 175°C | ||
Height 0.75mm | ||
Standards/Approvals RoHS | ||
Length 7.9mm | ||
Width 7.9 mm | ||
Automotive Standard No | ||
The STMicroelectronics SiC diode is an ultra-high performance power Schottky diode, manufactured using a silicon carbide substrate. It has a wide band gap material that allows the design of a Schottky diode structure with a 650 V rating. No recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature, due to the schottky construction.
Less than 1 mm height package
High creep age package
No or negligible reverse recovery
Temperature independent switching behaviour
High forward surge capability
Very low drop forward voltage
Power efficient product
ECOPACK2 compliant component