STMicroelectronics 1200 V 10 A Diode 3-Pin DPAK
- RS-stocknr.:
- 210-8744P
- Fabrikantnummer:
- STPSC10H12B2-TR
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal 50 eenheden (geleverd op een doorlopende strip)*
€ 187,50
(excl. BTW)
€ 227,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 28 oktober 2026
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Aantal stuks | Per stuk |
|---|---|
| 50 - 98 | € 3,75 |
| 100 - 248 | € 3,10 |
| 250 + | € 3,065 |
*prijsindicatie
- RS-stocknr.:
- 210-8744P
- Fabrikantnummer:
- STPSC10H12B2-TR
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 60A | |
| Peak Reverse Current Ir | 30μA | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.35mm | |
| Height | 2.2mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 60A | ||
Peak Reverse Current Ir 30μA | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 9.35mm | ||
Height 2.2mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The STMicroelectronics 10A, 1200V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C
Low VF
DPAK HV creepage distance (anode to cathode) = 3 mm min.
ECOPACK2 compliant