Infineon 650 V 6 A SiC Silicon Carbide Diode Schottky 2-Pin TO-220 IDH06G65C5XKSA2

RS-stocknr.:: 218-6299
Fabrikantnummer:: IDH06G65C5XKSA2
Fabrikant:: Infineon

Infineon 650 V 6 A SiC Silicon Carbide Diode Schottky 2-Pin TO-220 IDH06G65C5XKSA2

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Subtotaal (1 tube van 50 eenheden)*

€ 78,75

(excl. BTW)

€ 95,30

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Plus verzending 200 stuk(s) vanaf 19 oktober 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,575	€ 78,75
100 - 200	€ 1,37	€ 68,50
250 - 450	€ 1,276	€ 63,80
500 - 950	€ 1,181	€ 59,05
1000 +	€ 1,125	€ 56,25

*prijsindicatie

RS-stocknr.:: 218-6299
Fabrikantnummer:: IDH06G65C5XKSA2
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	SiC Silicon Carbide Diode
	Mount Type	Through Hole
	Package Type	TO-220
	Maximum Continuous Forward Current If	6A
	Peak Reverse Repetitive Voltage Vrrm	650V
	Series	5th Generation thinQ!TM
	Rectifier Type	Schottky
	Pin Count	2
	Maximum Forward Voltage Vf	1.7V
	Minimum Operating Temperature	-55°C
	Peak Non-Repetitive Forward Surge Current Ifsm	54A
	Peak Reverse Current Ir	750μA
	Maximum Operating Temperature	175°C
	Standards/Approvals	J-STD20 and JESD22
	Height	29.95mm
	Length	10.2mm
	Width	4.5mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type SiC Silicon Carbide Diode
	Mount Type Through Hole
	Package Type TO-220
	Maximum Continuous Forward Current If 6A
	Peak Reverse Repetitive Voltage Vrrm 650V
	Series 5th Generation thinQ!TM
	Rectifier Type Schottky
	Pin Count 2
	Maximum Forward Voltage Vf 1.7V
	Minimum Operating Temperature -55°C
	Peak Non-Repetitive Forward Surge Current Ifsm 54A
	Peak Reverse Current Ir 750μA
	Maximum Operating Temperature 175°C
	Standards/Approvals J-STD20 and JESD22
	Height 29.95mm
	Length 10.2mm
	Width 4.5mm
	Automotive Standard No

Datasheet - IDH06G65C5XKSA2

Infineon 5th Generation thinQ!TM Series SiC Silicon Carbide Diode, 6A Max Continuous Forward Current, 650V Peak Reverse Repetitive Voltage - IDH06G65C5XKSA2

This SiC silicon carbide diode is a high-voltage Schottky rectifier designed for power conversion and switching applications requiring fast recovery and thermal resilience. It operates across an extended temperature range and is supplied in a through-hole TO-220 package suited to conventional heatsinking and mounting methods.

Features and Benefits:

• 650V Peak reverse rating enables high-voltage rectification
• 6A continuous forward current supports sustained load conduction
• 1.7V maximum forward voltage reduces conduction losses
• 54A surge current capacity handles transient inrush events
• 750μA Peak reverse current ensures low reverse leakage
• -55°C to 175°C operating range permits high-temperature operation

Applications

• Suitable for power supplies in industrial converters
• Ideal for automotive-adjacent power electronics (non-automotive standard)
• Used with through-hole assemblies requiring TO-220 mounting
• Can be used for high-voltage DC link rectification
• Used for surge-tolerant input rectifier stages

What mounting method does it require?

It is intended for through-hole mounting in a TO-220 package which allows attachment to standard heatsinks.

How many electrical connections are present?

The device provides two pins for electrical connection consistent with single-diode rectifier topology.

Which standards were used in reliability assessment?

Qualification and testing reference J-STD-20 and JESD22 standards.

What type of rectifier topology is implemented?

The part employs a Schottky rectifier structure using silicon carbide semiconductor material.

What are the physical package dimensions?

The component measures 10.2 mm in length, 4.5 mm in width and 29.95 mm in height.