Infineon 1200 V 5 A Diode Schottky 2-Pin DPAK
- RS-stocknr.:
- 222-4828
- Fabrikantnummer:
- IDM05G120C5XTMA1
- Fabrikant:
- Infineon
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 222-4828
- Fabrikantnummer:
- IDM05G120C5XTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 5A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | 5th Generation thinQ!TM 1200 V SiC Schottky Diode IDM05G120C5 | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.95V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.35 mm | |
| Height | 10.4mm | |
| Length | 6.65mm | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 5A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series 5th Generation thinQ!TM 1200 V SiC Schottky Diode IDM05G120C5 | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.95V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 2.35 mm | ||
Height 10.4mm | ||
Length 6.65mm | ||
Standards/Approvals J-STD20 and JESD22 | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 5 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance
Gerelateerde Links
- Infineon 1200 V 5 A Diode Schottky 2-Pin DPAK IDM05G120C5XTMA1
- Infineon 1200 V 18 A Switching Diode Schottky 2-Pin DPAK
- Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK
- Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK IDM02G120C5XTMA1
- Infineon 1200 V 18 A Switching Diode Schottky 2-Pin DPAK IDM10G120C5XTMA1
- onsemi 1200 V 22.5 A Diode Schottky 3-Pin DPAK
- Wolfspeed 1200 V 4.5 A Diode Schottky 3-Pin DPAK
- Wolfspeed 1200 V 19 A Diode Schottky 3-Pin DPAK
