Infineon 1.8 V 10 A SiC Schottky Diode Schottky 3-Pin DPAK IDD10SG60CXTMA2
- RS-stocknr.:
- 249-6927
- Fabrikantnummer:
- IDD10SG60CXTMA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 4,38
(excl. BTW)
€ 5,30
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 4,38 |
| 10 - 24 | € 4,16 |
| 25 - 49 | € 4,00 |
| 50 - 99 | € 3,82 |
| 100 + | € 3,55 |
*prijsindicatie
- RS-stocknr.:
- 249-6927
- Fabrikantnummer:
- IDD10SG60CXTMA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Mount Type | Surface | |
| Product Type | SiC Schottky Diode | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.8V | |
| Diode Configuration | Single | |
| Series | XDD10SG60 | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 860μA | |
| Maximum Forward Voltage Vf | 2.1V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 410A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Peak Reverse Recovery Time trr | 10ns | |
| Standards/Approvals | RoHS, JEDEC1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Mount Type Surface | ||
Product Type SiC Schottky Diode | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1.8V | ||
Diode Configuration Single | ||
Series XDD10SG60 | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 860μA | ||
Maximum Forward Voltage Vf 2.1V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 410A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Peak Reverse Recovery Time trr 10ns | ||
Standards/Approvals RoHS, JEDEC1 | ||
Automotive Standard No | ||
The Infineon schottky diode has silicon carbide as revolutionary semiconductor material. It does not have forward and reverse recovery. It has temperature independent switching behaviour. It has high surge current capability.
Pb-free lead plating
RoHS compliant
Qualified according to JEDEC for target applications
Breakdown voltage tested at 20mA
Optimized for high temperature operation
Lowest Figure of Merit QC/IF
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