- RS-stocknr.:
- 753-2967
- Fabrikantnummer:
- IDD03SG60CXTMA2
- Fabrikant:
- Infineon
Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service
- RS-stocknr.:
- 753-2967
- Fabrikantnummer:
- IDD03SG60CXTMA2
- Fabrikant:
- Infineon
Datasheets
Wetgeving en compliance
Productomschrijving
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diodes and Rectifiers, Infineon
Specificaties
Kenmerk | Waarde |
---|---|
Mounting Type | Surface Mount |
Package Type | DPAK (TO-252) |
Maximum Continuous Forward Current | 3A |
Peak Reverse Repetitive Voltage | 600V |
Diode Configuration | Single |
Diode Type | Schottky |
Pin Count | 3 |
Maximum Forward Voltage Drop | 2.3V |
Number of Elements per Chip | 1 |
Diode Technology | Schottky |
Peak Non-Repetitive Forward Surge Current | 100A |