Infineon SRAM, CY14B101PA-SFXI- 1 MB
- RS-stocknr.:
- 181-8377
- Fabrikantnummer:
- CY14B101PA-SFXI
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 10,56
(excl. BTW)
€ 12,78
(incl. BTW)
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- Plus verzending 603 stuk(s) vanaf 13 april 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 10,56 |
*prijsindicatie
- RS-stocknr.:
- 181-8377
- Fabrikantnummer:
- CY14B101PA-SFXI
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Memory Size | 1MB | |
| Product Type | SRAM | |
| Number of Words | 128k | |
| Number of Bits per Word | 8 | |
| Maximum Random Access Time | 15ns | |
| Address Bus Width | 8bit | |
| Maximum Clock Frequency | 104MHz | |
| Minimum Supply Voltage | 2.4V | |
| Timing Type | Synchronous | |
| Mount Type | Surface | |
| Maximum Supply Voltage | 2.6V | |
| Minimum Operating Temperature | -40°C | |
| Package Type | SOIC | |
| Pin Count | 16 | |
| Maximum Operating Temperature | 85°C | |
| Series | CY14B101PA | |
| Standards/Approvals | No | |
| Height | 2.36mm | |
| Length | 10.49mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Memory Size 1MB | ||
Product Type SRAM | ||
Number of Words 128k | ||
Number of Bits per Word 8 | ||
Maximum Random Access Time 15ns | ||
Address Bus Width 8bit | ||
Maximum Clock Frequency 104MHz | ||
Minimum Supply Voltage 2.4V | ||
Timing Type Synchronous | ||
Mount Type Surface | ||
Maximum Supply Voltage 2.6V | ||
Minimum Operating Temperature -40°C | ||
Package Type SOIC | ||
Pin Count 16 | ||
Maximum Operating Temperature 85°C | ||
Series CY14B101PA | ||
Standards/Approvals No | ||
Height 2.36mm | ||
Length 10.49mm | ||
Automotive Standard No | ||
The Cypress CY14X101PA combines a 1-Mbit nv SRAM[1] with a full-featured RTC in a monolithic integrated circuit with serial SPI interface. The memory is organized as 128K words of 8 bits each. The embedded nonvolatile elements incorporate the Quantum Trap technology, creating the worlds most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while the Quantum Trap cells provide highly reliable nonvolatile storage of data. Data transfers from SRAM to the nonvolatile elements (STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM from the nonvolatile memory (RECALL operation).You can also initiate the STORE and RECALL operations through SPI instruction.
