Renesas Electronics SRAM Memory- 4 MB
- RS-stocknr.:
- 254-4966
- Fabrikantnummer:
- 71V416S12PHGI
- Fabrikant:
- Renesas Electronics
Bulkkorting beschikbaar
Subtotaal (1 tray van 135 eenheden)*
€ 1.042,875
(excl. BTW)
€ 1.261,845
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 02 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 135 - 135 | € 7,725 | € 1.042,88 |
| 270 + | € 7,153 | € 965,66 |
*prijsindicatie
- RS-stocknr.:
- 254-4966
- Fabrikantnummer:
- 71V416S12PHGI
- Fabrikant:
- Renesas Electronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Renesas Electronics | |
| Product Type | SRAM Memory | |
| Memory Size | 4MB | |
| Organisation | 256k x 16 | |
| Number of Words | 262144 Words | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 12ns | |
| Address Bus Width | 18bit | |
| Minimum Supply Voltage | 3V | |
| Timing Type | Asynchronous | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 44 | |
| Maximum Operating Temperature | 85°C | |
| Series | 71V416 | |
| Standards/Approvals | JEDECLVTTL-Compatible | |
| Length | 9mm | |
| Height | 9mm | |
| Automotive Standard | No | |
| Supply Current | 200mA | |
| Alles selecteren | ||
|---|---|---|
Merk Renesas Electronics | ||
Product Type SRAM Memory | ||
Memory Size 4MB | ||
Organisation 256k x 16 | ||
Number of Words 262144 Words | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 12ns | ||
Address Bus Width 18bit | ||
Minimum Supply Voltage 3V | ||
Timing Type Asynchronous | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Pin Count 44 | ||
Maximum Operating Temperature 85°C | ||
Series 71V416 | ||
Standards/Approvals JEDECLVTTL-Compatible | ||
Length 9mm | ||
Height 9mm | ||
Automotive Standard No | ||
Supply Current 200mA | ||
The Renesas Electronics asynchronous static RAM center pwr & gnd pinout 4,194,304-bit high-speed static RAM organized as 256K x 16. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for highspeed memory needs. It has an output enable pin which operates as fast as 5 ns, with address access times as fast as 10 ns. It is packaged in a 44-pin, 400 mil Plastic SOJ and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package.
256K x 16 advanced high-speed CMOS static RAM
JEDEC center power / GND pinout for reduced noise.
One chip select plus one output enable pin
Bidirectional data inputs and outputs directly LVTTL-compatible
Low power consumption via chip deselect
Upper and lower byte Enable Pins
Single 3.3 V power supply
Available in 44-pin, 400 mil plastic SOJ package and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package.
Green parts available, see ordering information
Gerelateerde Links
- Renesas Electronics SRAM Memory, 71V416S12PHGI- 4Mbit
- Renesas Electronics SRAM Memory, RMLV0408EGSA-4S2#AA0- 4Mbit
- Renesas Electronics SRAM Memory, R1RW0416DSB-2PR#D0- 4Mbit
- Renesas Electronics SRAM Memory, R1RW0416DSB-2LR#D0- 4Mbit
- Renesas Electronics SRAM Memory, RMLV0408EGSP-4S2#CA0- 4Mbit
- Renesas Electronics SRAM Memory, R1RP0416DSB-2PR#D0- 4Mbit
- Renesas Electronics SRAM Memory, R1RW0416DSB-0PR#D0- 4Mbit
- Renesas Electronics SRAM Memory, R1RP0416DSB-2PI#D0- 4Mbit