JFETs

A JFET is a four-terminal device, the terminals are called the gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs and N-Channel P-Channel. FET stands for junction field-effect transistor. They can also be referred to as a JUGFET

N-Channel JFET Construction

The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

P-Channel JFET Construction

The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

Features and Benefits

  • High input impedance
  • Voltage-controlled device
  • A high degree of isolation between the input and the output
  • Less noise

What are JFET transistors used for?

JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.

What is the difference between a JFET and BJT (Bipolar Junction Transistor)?

The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carriers flow.

What is the doping of semiconductors?

Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.


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Omschrijving Prijs Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS-stocknr. 867-3287
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€ 0,27
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N 1.2 to 3mA 30 V - -30V Single Single - Surface Mount SOT-883 3 4pF 4pF 1.08 x 0.68 x 0.41mm
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FabrikantNXP
€ 0,235
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N 10 to 18mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
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FabrikantON Semiconductor
€ 0,068
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N 1.2 to 3mA 30 V - -30V Single Single 200 Ω Surface Mount CP 3 4pF 1.1pF 2.9 x 1.5 x 1.1mm
RS-stocknr. 792-5173
Fabrikantnummer2SK932-23-TB-E
FabrikantON Semiconductor
€ 0,304
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N 10 to 17mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS-stocknr. 166-3080
FabrikantnummerMMBF4092
FabrikantON Semiconductor
€ 0,135
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N Min. 15mA 0.2 V -40 V 40V Single Single 50 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS-stocknr. 800-9364
Fabrikantnummer2SK3666-2-TB-E
FabrikantON Semiconductor
€ 0,115
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N 0.6 to 1.5mA 30 V - -30V Single Single 200 Ω Surface Mount SOT-23 3 - - 2.9 x 1.5 x 1.1mm
RS-stocknr. 145-5192
Fabrikantnummer2SK3666-2-TB-E
FabrikantON Semiconductor
€ 0,066
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N 0.6 to 1.5mA 30 V - -30V Single Single 200 Ω Surface Mount SOT-23 3 - - 2.9 x 1.5 x 1.1mm
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FabrikantON Semiconductor
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N 10 to 17mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
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FabrikantON Semiconductor
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P -2 to -25mA 15 V +30 V -30V Single Single 250 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS-stocknr. 166-2224
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FabrikantON Semiconductor
€ 0,107
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P -2 to -15mA 15 V +30 V -30V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 1.04mm
RS-stocknr. 806-4302
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FabrikantON Semiconductor
€ 0,096
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N Min. 10mA 15 V -25 V 25V Single Single 18 Ω Surface Mount SOT-23 3 85pF 85pF 2.92 x 1.4 x 0.94mm
RS-stocknr. 145-5553
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N Min. 5mA - -35 V 35V Single Single 50 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS-stocknr. 166-2021
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FabrikantON Semiconductor
€ 0,125
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N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS-stocknr. 166-1831
FabrikantnummerMMBFJ113
FabrikantON Semiconductor
€ 0,069
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N Min. 2mA - -35 V 35V Single Single 100 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS-stocknr. 163-0963
FabrikantnummerMMBFJ177LT1G
FabrikantON Semiconductor
€ 0,11
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P 1.5 to 20mA - - 25V dc Single Single 300 Ω Surface Mount SOT-23 3 - 11pF 3.04 x 1.4 x 1.01mm
RS-stocknr. 749-8268
FabrikantnummerDSK5J01R0L
FabrikantPanasonic
€ 0,044
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N 5 to 12mA - - -55V Single Single - Surface Mount SMini3 F2 B 3 - - 2 x 1.25 x 0.8mm
RS-stocknr. 792-5161
Fabrikantnummer2SK3666-3-TB-E
FabrikantON Semiconductor
€ 0,259
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N 1.2 to 3mA 30 V - -30V Single Single 200 Ω Surface Mount CP 3 4pF 1.1pF 2.9 x 1.5 x 1.1mm
RS-stocknr. 806-1750
FabrikantnummerJ109
FabrikantON Semiconductor
€ 0,269
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N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS-stocknr. 166-2319
FabrikantnummerBSR58
FabrikantON Semiconductor
€ 0,069
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N 8 to 80mA 0.4 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.97mm
RS-stocknr. 625-5745
FabrikantnummerMMBFJ310LT1G
FabrikantON Semiconductor
€ 0,382
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N 24 to 60mA 25 V +25 V - Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm