MOSFETs | N-Channel | P-Channel | RS
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    MOSFETs

    MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

    These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

    What are depletion and enhancement modes?

    MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

    How do MOSFETs work?

    The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

    N-Channel vs. P-Channel MOSFETs

    N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

    P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

    18684 Producten voor MOSFETs

    STMicroelectronics
    N
    40 A
    1200 V
    -
    H2PAK-7
    SCT
    -
    Surface Mount
    -
    7
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    SiC
    -
    -
    Nexperia
    N
    70 A
    30 V
    -
    LFPAK
    -
    -
    Surface Mount
    -
    5
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Infineon
    N
    6 A
    700 V
    0.9 Ω
    IPAK (TO-251)
    CoolMOS™
    3.5V
    Through Hole
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    Silicon
    -
    -
    onsemi
    N
    6.6 A
    800 V
    1.9 Ω
    TO-220F
    QFET
    -
    Through Hole
    3V
    3
    -30 V, +30 V
    Enhancement
    56 W
    -
    Single
    10.16mm
    +150 °C
    1
    Si
    27 nC @ 10 V
    4.7mm
    Infineon
    N
    80 A
    80 V
    5.4 mΩ
    TO-220
    OptiMOS™ 3
    3.5V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    150 W
    -
    Single
    10.36mm
    +175 °C
    1
    Si
    52 nC @ 10 V
    4.57mm
    DiodesZetex
    N
    15.4 A, 45.4 A
    60 V
    0.0133 Ω
    PowerDI3333-8
    DMTH69
    3V
    Surface Mount
    -
    8
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    Si
    -
    -
    onsemi
    N
    131 A
    100 V
    3.6 mΩ
    DFN5
    -
    3V
    Surface Mount
    -
    5
    -
    -
    -
    -
    -
    -
    -
    1
    Si
    -
    -
    Vishay
    N
    9 A
    200 V
    400 mΩ
    TO-220AB
    -
    -
    Through Hole
    1V
    3
    -10 V, +10 V
    Enhancement
    74 W
    -
    Single
    10.41mm
    +150 °C
    1
    Si
    40 nC @ 10 V
    4.7mm
    Infineon
    N
    7 A
    800 V
    0.75 O
    TO-252
    CoolMOS™ P7
    3.5V
    Surface Mount
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    Si
    -
    -
    Infineon
    N
    117 A
    40 V
    -
    PQFN 5mm x 6mm
    HEXFET
    -
    Through Hole
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Vishay
    P
    8 A
    12 V
    33 mΩ
    TSOP-6
    TrenchFET
    -
    Surface Mount
    0.4V
    6
    -10 V, +10 V
    Enhancement
    4.2 W
    -
    Single
    3.1mm
    +150 °C
    1
    Si
    58 nC @ 10 V
    1.7mm
    Wolfspeed
    N
    404 A
    1200 V
    9.8 mΩ
    Half Bridge
    -
    2.3V
    Screw Mount
    1.8V
    7
    -10 V, +25 V
    Enhancement
    1.66 kW
    -
    Series
    106.4mm
    +150 °C
    2
    SiC
    1025 nC @ 20 V, 1025 nC @ 5 V
    61.4mm
    Infineon
    N
    86 A
    60 V
    7 mΩ
    DirectFET ISOMETRIC
    DirectFET, HEXFET
    4.9V
    Surface Mount
    3V
    -
    -20 V, +20 V
    Enhancement
    89 W
    -
    -
    6.35mm
    +150 °C
    1
    -
    36 nC @ 10 V
    5.05mm
    Infineon
    N
    660 mA
    200 V
    -
    SOT-223
    -
    -
    Surface Mount
    -
    3
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Nexperia
    N
    500 A
    40 V
    -
    LFPAK88
    -
    -
    Surface Mount
    -
    4
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Vishay
    N
    87 A
    30 V
    -
    PowerPAK 1212-8PT
    -
    -
    Surface Mount
    -
    8
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Infineon
    P
    80 A
    30 V
    -
    PG-TO252-3-11
    -
    -
    Surface Mount
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STMicroelectronics
    N
    9.2 A
    900 V
    980 mΩ
    TO-247
    MDmesh, SuperMESH
    4.5V
    Through Hole
    3V
    3
    -30 V, +30 V
    Enhancement
    200 W
    -
    Single
    15.75mm
    +150 °C
    1
    Si
    95 nC @ 10 V
    5.15mm
    IXYS
    N
    94 A
    300 V
    36 mΩ
    TO-3PN
    HiperFET, Polar3
    5V
    Through Hole
    -
    3
    -20 V, +20 V
    Enhancement
    1.04 kW
    -
    Single
    15.8mm
    +150 °C
    1
    Si
    102 nC @ 10 V
    4.9mm
    onsemi
    N
    214 A
    100 V
    3.6 mΩ
    TO-220AB
    PowerTrench
    -
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    333 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    89 nC @ 10 V
    4.83mm
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