STMicroelectronics MJD112T4 Transistor, 2 A NPN, 100 V, 3-Pin DPAK
- RS-stocknr.:
- 151-412
- Fabrikantnummer:
- MJD112T4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 2500 eenheden)*
€ 587,50
(excl. BTW)
€ 710,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 21 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 - 2500 | € 0,235 | € 587,50 |
| 5000 - 7500 | € 0,23 | € 575,00 |
| 10000 + | € 0,196 | € 490,00 |
*prijsindicatie
- RS-stocknr.:
- 151-412
- Fabrikantnummer:
- MJD112T4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 2A | |
| Maximum Collector Emitter Voltage Vceo | 100V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 100V | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum Operating Temperature | -65°C | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 20W | |
| Minimum DC Current Gain hFE | 200 | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 6mm | |
| Length | 6.4m | |
| Width | 2.2mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 2A | ||
Maximum Collector Emitter Voltage Vceo 100V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 100V | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum Operating Temperature -65°C | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 20W | ||
Minimum DC Current Gain hFE 200 | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 6mm | ||
Length 6.4m | ||
Width 2.2mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics Transistors, This device is manufactured in Planar technology with “base island” layout and monolithic Darlington configuration.
Good hFE linearity
High fT frequency
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