Nexperia PBSS5160DS,115 Transistor, -1 A PNP, -60 V, 6-Pin TSOP
- RS-stocknr.:
- 485-408
- Fabrikantnummer:
- PBSS5160DS,115
- Fabrikant:
- Nexperia
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- RS-stocknr.:
- 485-408
- Fabrikantnummer:
- PBSS5160DS,115
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -1A | |
| Maximum Collector Emitter Voltage Vceo | -60V | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Transistor Configuration | Isolated | |
| Maximum Collector Base Voltage VCBO | 80V | |
| Minimum Operating Temperature | -65°C | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 100 | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Power Dissipation Pd | 700mW | |
| Maximum Transition Frequency ft | 185MHz | |
| Pin Count | 6 | |
| Maximum Operating Temperature | 150°C | |
| Series | PBSS5160DS | |
| Standards/Approvals | RoHS | |
| Width | 1.5mm | |
| Length | 2.9mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -1A | ||
Maximum Collector Emitter Voltage Vceo -60V | ||
Package Type TSOP | ||
Mount Type Surface | ||
Transistor Configuration Isolated | ||
Maximum Collector Base Voltage VCBO 80V | ||
Minimum Operating Temperature -65°C | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 100 | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Power Dissipation Pd 700mW | ||
Maximum Transition Frequency ft 185MHz | ||
Pin Count 6 | ||
Maximum Operating Temperature 150°C | ||
Series PBSS5160DS | ||
Standards/Approvals RoHS | ||
Width 1.5mm | ||
Length 2.9mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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