onsemi MMBT5550LT1G NPN High Voltage Transistor, 600 mA NPN, 140 V dc, 3-Pin SOT-23
- RS-stocknr.:
- 765-318
- Fabrikantnummer:
- MMBT5550LT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 200 eenheden)*
€ 2,80
(excl. BTW)
€ 3,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 30 augustus 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 200 - 1800 | € 0,014 | € 2,80 |
| 2000 - 4800 | € 0,014 | € 2,80 |
| 5000 - 19800 | € 0,013 | € 2,60 |
| 20000 + | € 0,012 | € 2,40 |
*prijsindicatie
- RS-stocknr.:
- 765-318
- Fabrikantnummer:
- MMBT5550LT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | NPN High Voltage Transistor | |
| Maximum DC Collector Current Idc | 600mA | |
| Maximum Collector Emitter Voltage Vceo | 140V dc | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 160V dc | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Emitter Base Voltage VEBO | 6V dc | |
| Maximum Power Dissipation Pd | 225mW | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 1.4mm | |
| Series | MMBT5550L | |
| Height | 1.01mm | |
| Length | 3.04mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type NPN High Voltage Transistor | ||
Maximum DC Collector Current Idc 600mA | ||
Maximum Collector Emitter Voltage Vceo 140V dc | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 160V dc | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Emitter Base Voltage VEBO 6V dc | ||
Maximum Power Dissipation Pd 225mW | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Width 1.4mm | ||
Series MMBT5550L | ||
Height 1.01mm | ||
Length 3.04mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The onsemi NPN silicon transistor designed for applications requiring high voltage capabilities. With an impressive collector-emitter voltage rating of 140V, this device is engineered for optimum reliability in automotive and other industrial applications demanding stringent performance standards. Its Pb-free and halogen-free construction further reflects its compatibility with contemporary environmental regulations, ensuring compliance without compromising quality. Optimized for continuous collector currents of up to 600mA, this transistor excels in high-speed switching operations, offering minimal delays and enhanced efficiency for various electronic circuits.
High voltage capability with collector-emitter voltage ratings up to 140V
Designed for a continuous collector current of 600mA, supporting demanding applications
Pb-free and halogen-free construction complies with RoHS standards, promoting environmental safety
AEC-Q101 qualified, ensuring reliability in automotive and critical applications
Optimised for fast switching speeds, facilitating efficient circuit operation
Low collector-emitter saturation voltage, enhancing overall energy efficiency
Enhanced thermal stability with low thermal resistance, improving performance in high-temperature environments
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